Exam

<br />An overview of the history of microelectronic industry and the milestones in the theory of microelectronic devices. Advanced microelectronic devices and systems: submicrometer MOSFETs, FINFETs, NOR and NAND Flash memories, 3D memories, SRAM and DRAM, SOI transistors and thin film transistors (TFTs), and nano-wire devices. Liquid Crystal Display (LCD) systems and Charge-Coupled Devices (CCDs) cameras. Short-channel effects: charge sharing effects, drain induced barrier lowering and gate induced leakage current. New materials for metals, gate dielectrics, and semiconductors. Fabrications: typical MOS process flow and techniques, wafer cleaning, deposition (CVD and PECVD), masks and lithography, ion implantation, metallization, oxidation, epitaxy, dry etching (plasma and reactive ions), isolation techniques, and device variabilities. Testing and reliabilities: typical procedure and techniques, time-dependent dielectric breakdown (TDDB) and stress-induced-leakage-currents (SILC), Fowler-Nordheim injection, interface states and space charges in the oxide, the high and low frequency differential capacitance-voltage techniques, hot carrier induced degradation, bias temperature instabilities, lifetime prediction.<br />

Nano Devices, Fabrication and Testing - 7405ELE

Nano Devices, Fabrication and Testing

Analyse the performance of latest consumer electronic products

Critically appraise MOS fabrication process and techniques

Critically evaluate testing techniques and appreciate reliability issues