Exam

Report

An overview of the history of microelectronic industry and the milestones in the
theory of microelectronic devices
Advanced microelectronic devices and systems: submicrometer MOSFETs,
FINFETs, non-volatile memories, SOI transistors and thin film transistors (TFTs), and
nano-wire devices. Liquid Crystal Display (LCD) systems and Charge-Coupled
Devices (CCDs) cameras. Short-channel effects: charge sharing effects, drain
induced barrier lowering and gate induced leakage current. New materials for
metals, gate dielectrics, and semiconductors.

Fabrications: typical MOS process flow and techniques, wafer cleaning, deposition
(CVD and PECVD), masks and lithography, ion implantation, metallization, oxidation,
epitaxy, dry etching (plasma and reactive ions), isolation techniques, and device
variabilities.
Testing and reliabilities: typical procedure and techniques, time-dependent dielectric
breakdown (TDDB) and stress-induced-leakage-currents (SILC), Fowler-Nordheim
injection, interface states and space charges in the oxide, the high and low
frequency differential capacitance-voltage techniques, hot carrier induced
degradation, bias temperature instabilities, lifetime prediction.

Nano Devices, Fabrication and Testing - 7543ELEMST

Nano Devices, Fabrication and Testing

Critically appraise MOS fabrication process and techniques

Critically evaluate testing techniques and appreciate reliability issues

Show a high level knowledge of the theory and problems of advanced microelectronic devices

Use proprietary industry-standard simulation software for device and fabrication process modelling